Samsung has reported that it is in the final stages of developing the world’s first 160 layers NAND flash memory chips. These 7th generation chips put the company at a pole position relative to peers in the super-conductor industry. The chips are made possible by the use of double-stack technology that significantly increases the number of layers in a chip as opposed to the single-stack technology which creates all holes at once.
160-layers is the highest number achieved so far in a NAND flash memory chip. Prior to that, 128 layers was the highest and no known company before Samsung has gone public to announce that they have succeeded in creating a 160-layer or greater NAND flash memory.
Last year Samsung and SK Hynix announced that they had partnered to develop 128-layer NAND flash memory. However, Yangtze Memory Technologies (YMTC) of China broke that record. Yangtze not only touted having achieved a similar capability to create NAND chips. They also announced plans to start mass production of the 128-layer NAND flash memory chips. Therefore, it’s easy to see why getting to 160-layers was such a significant milestone for Samsung.
This latest development marks a crucial step for the company’s memory chip business as it tries to outpace the competition. Samsung raked $16.4 billion from the sale of NAND flash memory chips globally in 2020. The company currently commands a 35.9% market share of the semiconductor business.
The company’s operations have been impacted by the COVID-19 pandemic situation. It has slowed production but they also continue to invest more in the business. This is because the memory business cushioned the company’s profit from a nosedive in Q1 2020.